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3121303 Microelectronic Device Physics

Editor:xdx Date:2017-12-14 Hits:19

The basis of this lecture plan is the experience gained from teaching graduate students from many disciplines attend the class to understand important devices at a level higher than their exposure as undergraduates. It is therefore proposed that the first quarter cover p-n junctions, heterojunctions, HBTs, FETs and MOSFETs operating under DC conditions. Here drift diffusion analysis and thermionic emission will be employed to describe current flow. In the next quarter, it is suggested that the Boltzmann transport analysis contained in the Appendix be covered and the basis for the drift-diffusion fomralism explained. Next the methodology for deriving the high frequency properties of devices such as HBTs and  FETs along with their equivalent circuits is covered. Lastly, High Electron Mobility Transistors and Gallium Nitride based devices may be covered Part 1 Lecture 1: Shockley-Read-Hall analysis of lifetime (this introduces the concept of lifetime essential for p-n junction analysis) Lecture 2: P-n junction electrostatics, P-n junction transport (Forward) Lecture 3: P-n junction transport (Reverse) and Applications Lecture 4: Schottky barrier electrostatics and current transport Lecture 5: Graded materials, Quasi-fields and heterojuncions Lecture 6: HBTs, Generalized Moll-Ross relationship Early effect, Kirk effect(quick description) Lecture 7: FETs and gradual channel analysis Lecture 8: High Aspect Ratio design analysis Lecture 9: MOS Capacitor and MOSFETs Lecture 10: Non-ideal effects Part 2 Lecture 1 and 2: Boltzmann Transport Equation and consequences (Drift Diffusion Equation derivation, relaxation times) Lecutre 3: Charge Control Model (Description and application to HBTs) Lecutre 4: Ramo-Shockley Theorem and the Kirk effect Lecutre 5: High Frequency properties of HBTs Lecutre 6: Equivalenbt Circuit derivation of HBTs; Figures of Merit Lecutre 7: HEMTs; Electrostatics Lecutre 8: Gallium Nitride; Polarization and device design Lecutre 9: HEMTs; I-V characteristics, Design Issues Lecutre 10: HEMTs and FETs; High Frequency Performance

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